BF1009SW Datasheet (Infineon) - Silicon N-Channel MOSFET Tetrode

BF1009SW, Silicon N-Channel MOSFET Tetrode

BF1009SW Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled 3 4 input stages up to 1GHz Operating voltage 9V Integrated bias network Drain AGC HF Input G2 G1 HF Output + DC 2 1 VPS05605 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF1009SW Maximum Ratings Parameter Drain-source voltage Marking JLs 1=D Pin Configuration 2=S 3 = G1 4 = G2 Package SOT343 Unit V mA V mW °C Symbol VDS ID ±IG1/2SM +VG1SE Ptot Tstg Tch