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BF 1009
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9 V • Integrated stabilized bias network
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1009
Marking Ordering Code Pin Configuration JKs Q62702-F1613 1 = S 2=D
Package
3 = G2 4 = G1 SOT-143
Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation , T S ≤ 76 °C0 Storage temperature Channel temperature Symbol Value 12 25 10 3 200 -55 ...
BF1009 Datasheet
