Datasheet Summary
BF 1012S
Silicon N-Channel MOSFET Tetrode
- For low noise, high gain controlled input stages up to 1GHz
- Operating voltage 5V
- Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Q62702-F1627
Pin Configuration 1=S 2=D 3 = G2 4 = G1
Package SOT-143
BF 1012S NYs
Maximum Ratings Parameter Drain-source voltage
Symbol
Value 16 25 10 3 200 -55 ...+150 150
Unit V mA V mW °C
VDS ID
±I G1/2SM +VG1SE
Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature
Ptot T stg T ch
Thermal Resistance Channel...