BF1012 datasheet by Siemens Semiconductor Group (now Infineon).
| Part number | BF1012 |
|---|---|
| Datasheet | BF1012_SiemensSemiconductorGroup.pdf |
| File Size | 33.42 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon N-Channel MOSFET Tetrode |
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BF 1012 Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network 3 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! It is not remended to apply external DC-voltage on Gate 1 in active mode.
View all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| BF1012S | Silicon N-Channel MOSFET Tetrode |
| BF1012W | Silicon N-Channel MOSFET Tetrode |
| BF1005 | Silicon N-Channel MOSFET Tetrode |
| BF1005S | Silicon N-Channel MOSFET Tetrode |
| BF1009 | Silicon N-Channel MOSFET Tetrode |
| BF1009S | Silicon N-Channel MOSFET Tetrode |
| BF198 | NPN Silicon RF Transistor |
