Datasheet Summary
BF 1012
Silicon N-Channel MOSFET Tetrode
- For low noise, high gain controlled input stages up to 1GHz
- Operating voltage 12V
- Integrated stabilized bias network
3 4 2 1
VPS05178
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1012
Marking Ordering Code Pin Configuration MYs Q62702-F1487 1 = S 2=D
Package
3 = G2 4 = G1 SOT-143
Maximum Ratings Parameter Drain-source voltage Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation , T S ≤ 76 °C Storage temperature Channel temperature Symbol Value 16 25 10 3 200 -55 ...+150 150 V mW °C Unit V mA
VDS ID
±IG1/2SM +VG1SE
Ptot Tstg Tch
Thermal...