F2001 Datasheet | Specifications & PDF Download

www.DataSheet4U.com RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3

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Super Fast Recovery Diode RF2001NS3D Series Standard Fast Recovery Dimensions (Unit : mm) Applications General rectification RF2001 NS3D ① Dat

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MG061F200160A Bridge Diodes 1600V, 200A Feature ・High current capacity ・Thin PKG 17mm ・High heat dissipation ・Halogen free ・Pb free terminal ・RoHS:Yes

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NF2000H-B Series DC Line 48VDC For DC Power supply/High attenuation Type Application On-boarded type power supply Specifications Part No. NF2001H-B

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Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions (Unit : mm) Features 1) High reliability. (TO-2

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM =

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ULTRA FAST GLASS PASSIVATED RECTIFIERS UF2001G thru UF2007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes FEATURES Glass passivat

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FPF2000-FPF2007 IntelliMAX™ Advanced Load Management Products December 2004 FPF2000-FPF2007 IntelliMAX™ Advanced Load Management Products Features ■

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CHENMKO ENTERPRISE CO.,LTD HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE 50 - 1000 Volts FEATURES * Plastic package has Underwriters Laboratory Flammability

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Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V VRRM MBRF20045 thru MBRF200100R VRRM = 20 V - 100 V IF = 200 A TO-2

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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IntelliMAXt Advanced Load Management Products FPF2000 - FPF2007 General Description The FPF2000 through FPF2007 is a family of load switches which pro

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Fast recovery diodes RF2001T3D Applications General rectification Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4

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SF2001E • • • • RF Filter for Mobile Communication Applications No Matching Circuit Required 3.0 x 3.0 x 1.3 mm Package Complies with Directive 2002/9

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HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353 D (Z) 5th. Edition October 1997 Features This FET has the over temperature shut–

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