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F2001 Datasheet, Features, Application

F2001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDM.

Rohm
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RF2001 - Fast recovery Diodes

Rohm
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RF2001NS3D - Fast Recovery Diodes

Motorola Semiconductor
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MRF2001M - Microwave Power Transistors

HY ELECTRONIC
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UF2008 - (UF2001 - UF2008) ULTRA FAST RECTIFIERS

Rohm
rating-1 9

RF2001T3D - Fast Recovery Diodes

Taiwan Semiconductor
rating-1 9

SFAF2001G - Isolated Glass Passivated Super Fast Rectifiers

GeneSiC
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MBRF200100R - Silicon Power Schottky Diode

Polyfet RF Devices
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F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Motorola Semiconductor
rating-1 7

MRF2001B - Microwave Power Transistors

Taiwan Semiconductor Company
rating-1 7

SF2005PT - (SF2001PT - SF2008PT) Glass Passivated Super Fast Rectifiers

Thinki Semiconductor
rating-1 7

SF2001GD - (SF2001GD - SF2008GD) 20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode

MOSPEC
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UF2001 - ULTRA-FAST GLASS PASSIVATED RECTIFIER

Gulf Semiconductor
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SUF2001 - (SUF2001 - SUF2007) High Efficient Plastic Silicon Rectifier

Gulf Semiconductor
rating-1 6

SUF2005 - (SUF2001 - SUF2007) High Efficient Plastic Silicon Rectifier

HY ELECTRONIC
rating-1 6

UF2003 - (UF2001 - UF2008) ULTRA FAST RECTIFIERS

Taiwan Semiconductor Company
rating-1 6

SF2002PT - (SF2001PT - SF2008PT) Glass Passivated Super Fast Rectifiers

Taiwan Semiconductor Company
rating-1 6

SF2003PT - (SF2001PT - SF2008PT) Glass Passivated Super Fast Rectifiers

Taiwan Semiconductor Company
rating-1 6

SF2004PT - (SF2001PT - SF2008PT) Glass Passivated Super Fast Rectifiers

KODENSHI KOREA
rating-1 6

SUF2001 - Dual N-and P-channel Trench MSFET

Thinki Semiconductor
rating-1 6

SF2004GD - (SF2001GD - SF2008GD) 20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode

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