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F2001 Datasheet - Polyfet RF Devices

F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F2001 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2.5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM

F2001_PolyfetRFDevices.pdf

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Datasheet Details

Part number:

F2001

Manufacturer:

Polyfet RF Devices

File Size:

37.86 KB

Description:

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.

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