Part number:
F2001
Manufacturer:
Polyfet RF Devices
File Size:
37.86 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
Datasheet Details
F2001 Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2.5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM
Datasheet Details
F2001
Polyfet RF Devices
37.86 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
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