F2012 Datasheet, Transistor, Polyfet RF Devices

F2012 Features

• Transistor gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS

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Part number:

F2012

Manufacturer:

Polyfet RF Devices

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37.56kb

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📄 Datasheet

Description:

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and P

F2012 Application

• Applications Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pr

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