Part number:
F2012
Manufacturer:
Polyfet RF Devices
File Size:
37.56 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
Datasheet Details
F2012 Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2012 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM
Datasheet Details
F2012
Polyfet RF Devices
37.56 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
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