F2003 Datasheet, Transistor, Polyfet RF Devices

F2003 Features

  • Transistor gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS

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Part number:

F2003

Manufacturer:

Polyfet RF Devices

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37.61kb

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📄 Datasheet

Description:

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and P

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Page 2 of F2003

F2003 Application

  • Applications Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pr

TAGS

F2003
PATENTED
GOLD
METALIZED
SILICON
GATE
ENHANCEMENT
MODE
POWER
VDMOS
TRANSISTOR
Polyfet RF Devices

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Stock and price

Samtec Inc
.050" LP ARRAY HIGH-SPEED HIGH-
DigiKey
LPAF-20-03.0-S-08-2-K-TR
142 In Stock
Qty : 100 units
Unit Price : $13.85
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