Part number:
F2003
Manufacturer:
Polyfet RF Devices
File Size:
37.61 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
Datasheet Details
F2003 Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2003 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RA
Datasheet Details
F2003
Polyfet RF Devices
37.61 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
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