F2002 Datasheet - Polyfet RF Devices

F2002, PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Details

Part number:

F2002

Manufacturer:

Polyfet RF Devices

File Size:

37.91 KB

Description:

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

F2002 Distributors

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F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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