Part number:
F2002
Manufacturer:
Polyfet RF Devices
File Size:
37.91 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
Datasheet Details
F2002 Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2002 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R
Datasheet Details
F2002
Polyfet RF Devices
37.91 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
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