F2013 Datasheet - Polyfet RF Devices

F2013, PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Details

Part number:

F2013

Manufacturer:

Polyfet RF Devices

File Size:

38.20 KB

Description:

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATING

F2013 Distributors

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F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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