Part number:
F2013
Manufacturer:
Polyfet RF Devices
File Size:
38.20 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
Datasheet Details
F2013 Features
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2013 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATING
Datasheet Details
F2013
Polyfet RF Devices
38.20 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
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