F20N60 Datasheet | Specifications & PDF Download

Xiner XNF20N60T 600V，20A，Trench-FS IGBT Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typi

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FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary The FQP20N60 & FQPF20N60 have been fabricated using an advanced hi

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SEMICONDUCTOR TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit rugg

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FCP20N60 / FCPF20N60 — N-Channel SuperFET® MOSFET August 2014 FCP20N60 / FCPF20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features • 650V @

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TSF20N60MR TSF20N60MR 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technolog

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20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

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SVF20N60F/PN_Datasheet 20A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF20N60F/PN is an N-channel enhancement mode power MOS field effect transistor w

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MOSFET – N-Channel, SuperFET) 600 V, 20 A, 190 mW FCP20N60, FCPF20N60 Description SuperFET MOSFET is onsemi’s first generation of high voltage super−j

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Description JMP N-channel MOSFET Features  600V,20A  RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A  Fast Switching  Improved dv/dt Capability  100%

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AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced hi

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isc N-Channel MOSFET Transistor AOTF20N60 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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TSP20N60S/TSF20N60S/TSB20N60S 600V N-Channel MOSFET TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET

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Features � 20A,600V,RDS(on)(Max0.39Ω)@VGS=10V � Ultra-low Gate charge(Typical 50nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junct

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WFF20N60S Silicon N-Channel MOSFET Features � Ultra low Rdson � Ultra-low Gate charge(Typical 65nC) � 100% UIS Tested � RoHS compliant General Descri

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SVF20N60F/PN_Datasheet 20A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF20N60F/PN is an N-channel enhancement mode power MOS field effect transistor w

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MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ Features • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capa

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FGAF20N60SMD 600 V 20 A Field Stop IGBT April 2013 FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High Cu

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SSP20N60S / SSF20N60S 600V N-Channel MOSFET September, 2012 SJ-FET SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation

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BRF20N60 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220FL N MOS 。N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ，,。 Ultra low ga

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