F20N60
ROUM
1.13MB
20a 600v n-channel enhancement mode power mosfet. These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improv
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F20N20 - N-Channel Power MOSFET
(STMicroelectronics)
STP20N20
STF20N20 - STD20N20
N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET™ II MOSFET
DATA BRIEF
Table 1: General Feat.
F20NM50FD - N-CHANNEL POWER MOSFET
(STMicroelectronics)
STB20NM50FD STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET (with fast diode)
Features
Type
VD.
F20NM60D - STF20NM60D
(STMicroelectronics)
STF20NM60D - STP20NM60FD STW20NM60FD
N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh™ Power MOSFET (with fast diode)
General feature.
F2001 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2002 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2003 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2004 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2012 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2013 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2021 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .