F20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET

F20N60 Datasheet Preview — Preview of F20N60 PDF

Datasheet Details

Part number	F20N60
Manufacturer	ROUM
File Size	1.13 MB
Description	20A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	F20N60-ROUM.pdf

F20N60 Product details

Description

These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F.

Features

Fast Switching.
Low On Resistance(Rdson≤0.45Ω).
Low Gate Charge(Typical:61nC).
Low Reverse Transfer Capacitances(Typical:20pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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Published: Jan 16, 2019 |