FCX591 Datasheet | Specifications & PDF Download

FCX591AQ 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirem

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REPLACEMENT TYPE : FCX591 FEATURES  Power Dissipation HECX591(PNP) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) P

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A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > -40V • Maximum Continuous Cu

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Production specification PNP Silicon Planar Medium Power High Perormance Transistor FCX591 FEATURES  Complementary type:FCX491. Pb Lead-free ORDE

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Features • BVCEO > -60V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • RCE(SAT) = 295mΩ for a Low Equivalent On-Res

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