Production specification PNP Silicon Planar Mediu.
Diodes
4
FCX591A - 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
A Product Line of Diodes Incorporated FCX591A 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > -40V • Maximum Continuous Cu.
Diodes
3
FCX591 - 60V PNP MEDIUM POWER TRANSISTOR
Features • BVCEO > -60V • IC = -1A high Continuous Collector Current • ICM = -2A Peak Collector Current • RCE(SAT) = 295mΩ for a Low Equivalent On-Res.
Diodes
2
FCX591AQ - PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
FCX591AQ 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirem.
GME
1
FCX591 - PNP Silicon Planar Medium Power High Perormance Transistor
Production specification PNP Silicon Planar Medium Power High Perormance Transistor FCX591 FEATURES Complementary type:FCX491. Pb Lead-free ORDE.
HOTTECH
1
FCX591 - GENERAL PURPOSE TRANSISTOR
REPLACEMENT TYPE : FCX591 FEATURES Power Dissipation HECX591(PNP) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) P.