FDB2710 — N-Channel PowerTrench® MOSFET Novemb.
Fairchild Semiconductor
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FDB2710 - N-Channel MOSFET
FDB2710 — N-Channel PowerTrench® MOSFET November 2013 FDB2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ Features • RDS(on) = 36.3 mΩ ( Typ.
Inchange Semiconductor
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FDB2710 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor FDB2710 FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Re.