FDMC86012 N-Channel Power Trench® MOSFET October.
Fairchild Semiconductor
FDMC86012 - MOSFET
FDMC86012 N-Channel Power Trench® MOSFET October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.7 mΩ Features Max rDS(on) = 2.7 mΩ a.
ON Semiconductor
FDMC86012 - N-Channel MOSFET
MOSFET – N-Channel, POWERTRENCH) 30 V, 88 A, 2.7 mW FDMC86012 General Description This device has been designed specifically to improve the efficiency.