FDV303N Datasheet | Specifications & PDF Download

SMD Type N-Channel MOSFET FDV303N (KDV303N) MOSFET ■ Features ● VDS (V) = 25V ● ID = 0.68 A ● RDS(ON) ＜ 450mΩ (VGS = 4.5V) ● RDS(ON) ＜ 600mΩ (VGS =

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Digital FET, N-Channel FDV303N General Description These N−Channel enhancement mode field effect transistors are produced using ON Semiconductor’s p

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FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietar

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UMW FDV303N 25V N-ChanneI MOSFET 1.Features VDS(V)=25V ID=0.68A RDS(ON)<28mΩ(VGS=4.5V) RDS(ON)<42mΩ(VGS=2.7V) Compact industry standard SOT-23 surfac

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