RECTIFIER, up to 150V, 1.8A, 30ns 1N6073 1N6074 1N.
INCHANGE
SFF1005G - Ultrafast Rectifier
Ultra fast Rectifier INCHANGE Semiconductor SFF1005G FEATURES ·Low forward voltage drop ·High current capability ·High reliability ·High surge curre.
Taiwan Semiconductor
SFF1005GA - (SFF1001GA - SFF1008GA) 10.0AMPS Isolated Glass Passivated Super Fast Rectifier
CREAT BY ART SFF1001GA - SFF1008GA 10.0AMPS Isolated Glass Passivated Super Fast Rectifier ITO-220AB Features High efficiency, low VF Hi.
Wing On
PFF10N65 - N-Channel MOSFET
PFP10N65 / PFF10N65 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.
Frontier
UFF100-02 - 10A Ultra Fast Recovery Rectifier
FRONTIER ELECTRONICS CO., LTD. UFF100-005 THRU UFF100-06 10A ULTRA FAST RECOVERY RECTIFIER C ASE : ITO-220AC( UFF100-×× ), FULLY INSULATED PACKAGE O.
Wing On
PFF10N40 - N-Channel MOSFET
Sep 2008 PFP10N40 / PFF10N40 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances.
GW
SFF105 - 10.0 AMP SUPER FAST RECTIFIERS
SFF101 THRU SFF107 10.0 AMP SUPER FAST RECTIFIERS FEATURES * Low forward voltage drop * High current capability * High reliability * High surge curr.
Wisdom technologies
WFF10N60 - N-Channel MOSFET
HIGH VOLTAGE N-Channel MOSFET WFF10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Ext.
Frontier
UFF100-04 - 10A Ultra Fast Recovery Rectifier
FRONTIER ELECTRONICS CO., LTD. UFF100-005 THRU UFF100-06 10A ULTRA FAST RECOVERY RECTIFIER C ASE : ITO-220AC( UFF100-×× ), FULLY INSULATED PACKAGE O.
Winsemi
WFF10N65L - Silicon N-Channel MOSFET
WFF10N65L Product Description Silicon N-Channel MOSFET Features � 10A,650V,RDS(on)(Max1.0Ω)@VGS=10V � Ultra-low Gate charge(Typical 32nC) � Fast Switc.
Wing On
PFF10N80A - N-Channel MOSFET
PFP10N80A / PFF10N80A FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remar.
Wing On
PFF10N80E - N-Channel MOSFET
PFP10N80E / PFF10N80E FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remar.
WINSEMI SEMICONDUCTOR
WFF10N65 - Silicon N-Channel MOSFET
www.DataSheet.in F10N6 5 WF WFF 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43.
Frontier Electronics
SFF100-04CT - 10A DUAL SUPER FAST RECOVERY RECTIFIER
SFF100-03CT THRU SFF100-06CT SPECIFICATIONS Rev. A 10A DUAL SUPER FAST RECOVERY RECTIFIER PRODUCT FEATURES 1. FLAMMABILITY CLASSIFICATION: 94V-0 2..
GW
SFF107CT - 10.0 AMP SUPER FAST RECTIFIERS
SFF101CT THRU SFF107CT 10.0 AMP SUPER FAST RECTIFIERS FEATURES * Low forward voltage drop * High current capability * High reliability * High surge .
Infineon
FF1000R17IE4P - IGBT
TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FF1000R17IE4P PrimePACK™3ModulmitTrench/FeldstoppIGBT4undEmitterContro.
Wing On
PFF10N60 - N-Channel MOSFET
Nov 2011 PFP10N60 / PFF10N60 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances.
Taiwan Semiconductor Company
SFF1005G - Super Fast Rectifier
SFF1001G – SFF1008G Taiwan Semiconductor 10A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● High efficiency, low VF ● Hi.
WINSEMI SEMICONDUCTOR
WFF10N60 - Silicon N-Channel MOSFET
www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast .
Taiwan Semiconductor
SFF1006GA - (SFF1001GA - SFF1008GA) 10.0AMPS Isolated Glass Passivated Super Fast Rectifier
CREAT BY ART SFF1001GA - SFF1008GA 10.0AMPS Isolated Glass Passivated Super Fast Rectifier ITO-220AB Features High efficiency, low VF Hi.
Infineon
FF100R12KS4 - IGBT-Module
Technische Information / technical information IGBT-Module IGBT-modules FF100R12KS4 62mm C-Serien Modul mit schnellem IGBT2 für hochfrequentes Schal.
