FJD3076 FJD3076 Power Amplifier Applications • .
FJD3076 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor FJD3076 DESCRIPTION ·Low collector saturation voltage ·High current gain characteristics ·Fa.FJD3076 - NPN Epitaxial Silicon Transistor
FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage 1 D-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Si.