INCHANGE
FKV660S - N-Channel MOSFET
isc N-Channel MOSFET Transistor
FKV660S
FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Res
Rating:
1
★
(6 votes)
Sanken electric
FKV660 - MOSFET
MOS FET FKV660 (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 60 ± 20 ± 50 ± 150 Uni
Rating:
1
★
(5 votes)
Sanken electric
FKV660S - MOSFET
MOS FET FKV660S
Absolute Maximum Ratings (Ta=25ºC)
Symbol Ratings VDSS 60 VGSS +20, –10 ± 60 ID ± 180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +1
Rating:
1
★
(3 votes)
