FKV660 Datasheet | Specifications & PDF Download

MOS FET FKV660 (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 60 ± 20 ± 50 ± 150 Uni

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MOS FET FKV660S Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings VDSS 60 VGSS +20, –10 ± 60 ID ± 180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +1

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isc N-Channel MOSFET Transistor FKV660S FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Res

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