FLL200 Dimensions The Relationship for Open Circui.
FAAM
FLL200 - The Relationship for Open Circuit Voltage and Residual Capacity
FLL200 Dimensions The Relationship for Open Circuit Voltage and Residual Capacity (25℃) Charging Characteristics(25℃) Specifications Nominal Voltage .
Eudyna Devices
FLL200IB-1 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
Eudyna Devices
FLL200IB-2 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
Eudyna Devices
FLL200IB-3 - (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
FLL200IB-1, FLL200IB-2, FLL200IB-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 1.
