FMMT458 Datasheet | Specifications & PDF Download

Features  BVCEO > 400V  IC = 225mA High Continuous Collector Current  ICM = 1A Peak Pulse Current  500mW Power Dissipation  Excellent hFE Charact

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NPN Silicon Epitaxial Planar Transistor FEATURES  High voltage.  Complementary To FMMT558. Pb Lead-free Production specification FMMT458 ORDERIN

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