FP130 Datasheet | Specifications & PDF Download

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP13

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X3-Class HiPerFETTM Power MOSFET IXFP130N15X3 IXFH130N15X3 N-Channel Enhancement Mode Avalanche Rated D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA

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Technical Data 10477 Effective November 2015 FP1309B High frequency, high current power inductors Product description • High current carrying cap

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VG

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isc N-Channel MOSFET Transistor IXFP130N15X3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0mΩ@VGS=10V ·Fully characterized avalanche vo

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isc N-Channel MOSFET Transistor IXFP130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vol

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Rail Current Measurement IC FP130A General Description The FP130A is a wide common mode range high side rail current measurement IC. It is suitable

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Technology FP130 RAIL CURRENT MEASUREMENT IC GENERAL DESCRIPTION The FP130 is a wide input common mode voltage range IC for the rail current measure

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isc N-Channel MOSFET Transistor IXFP130N10T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche vo

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Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  100% Avalanche test  Pb-free lead platin

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Alfa-MOS Technology AFP1303 20V P-Channel Enhancement Mode MOSFET General Description AFP1303, P-Channel enhancement mode MOSFET, uses Advanced Tren

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Technical Data DS4313 Effective June 2017 Supersedes Sepetember 2011 FP1308 High frequency, high current power inductors SMD Device Product feature

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Technical Data 4355 Effective June 2017 Supersedes March 2012 FP1308R High frequency, high current power inductors SMD Device Product features • 13

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