FQD2N60 Datasheet | Specifications & PDF Download

FQD2N60C / FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C / FQU2N60C 600 V, 1.9 A, 4.7 Ω Features • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS

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MOSFET – N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary

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FQD2N60 / FQU2N60 April 2000 QFET FQD2N60 / FQU2N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect tr

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