FQP20N06 Datasheet | Specifications & PDF Download

FQP20N06 May 2001 QFET FQP20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce

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FQP20N06L — N-Channel QFET® MOSFET FQP20N06L N-Channel QFET® MOSFET 60 V, 21 A, 55 mΩ Description This N-Channel enhancement mode power MOSFET is pro

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·S

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Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e

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Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e

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