FQP20N06L Datasheet, Mosfet, Fairchild Semiconductor

FQP20N06L Features

• Mosfet
• 21 A, 60 V, RDS(on) = 55 mΩ (Max.) @ VGS = 10 V, ID = 10.5 A
• Low Gate Charge (Typ. 9.5 nC)
• Low Crss (Typ. 35 pF)
• 100% Avalanche Tested

PDF File Details

Part number:

FQP20N06L

Manufacturer:

Fairchild Semiconductor

File Size:

696.39kb

Download:

📄 Datasheet

Description:

60v n-channel mosfet. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technolog

FQP20N06L Application

• Applications November 2013 Features
• 21 A, 60 V, RDS(on) = 55 mΩ (Max.) @ VGS = 10 V, ID = 10.5 A
• Low Gate Charge (Typ. 9.5 nC)

TAGS

FQP20N06L

Fairchild Semiconductor

📁 Related Datasheet

FQP20N06 - 60V N-Channel MOSFET (Fairchild Semiconductor)
FQP20N06 May 2001 QFET FQP20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce.

FQP20N06 - N-Channel 60-V (D-S) MOSFET (Freescale)
Freescale N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e.

FQP20N06L - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP20N06L DESCRIPTION ·Drain Current ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·S.

FQP20N60 - 20A N-Channel MOSFET (Oucan Semi)
FQP20N60/FQPF20N60 600V,20A N-Channel MOSFET General Description Product Summary The FQP20N60 & FQPF20N60 have been fabricated using an advanced hi.

FQP22N30 - 300V N-Channel MOSFET (Fairchild Semiconductor)

 

  QFET  % % % % % % &'( )**+ ,
 - * '.Ω /+ - '* + 0      1     23 4 0   1     2*.

FQP22N50 - 22A N-Channel MOSFET (Oucan Semi)
FQP22N50/FQPF22N50 500V,22A N-Channel MOSFET General Description Product Summary The FQP22N50 & FQPF22N50 have been fabricated using an advanced hi.

FQP22P10 - 100V P-Channel MOSFET (Fairchild Semiconductor)
FQP22P10 QFET FQP22P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F.

FQP24N08 - 80V N-Channel MOSFET (Fairchild Semiconductor)
FQP24N08 August 2000 QFET FQP24N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

FQP27N25 - N-Channel MOSFET (Fairchild Semiconductor)

 

  QFET  % % % % % % &' '( &')* +
 , ) --Ω .* , -) * /      0     ') 1 /   0     .

FQP27P06 - 60V P-Channel MOSFET (Fairchild Semiconductor)
FQP27P06 P-Channel QFET® MOSFET March 2013 FQP27P06 P-Channel QFET® MOSFET - 60 V, - 27 A, 70 m Description This P-Channel enhancement mode power .