FQPF9N90C Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·DESCRIPTION ·RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A ·Fast Switching Speed ·100% Avalanche Tested ·Minimum Lot-to-Lot

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MOSFET – N-Channel, QFET) 900 V, 8.0 A, 1.4 W FQP9N90C, FQPF9N90CT Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s

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FQP9N90C / FQPF9N90C — N-Channel QFET® MOSFET FQP9N90C / FQPF9N90C N-Channel QFET® MOSFET 900 V, 8.0 A, 1.4 Ω December 2013 Description This N-Chan

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