FQU10N20 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistance : RDS(on) = 0.36Ω(Max) ·100% Avalanche Tested ·

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FQD10N20L / FQU10N20L December 2000 QFET FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode powe

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FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Features • 7.8 A, 200 V, RDS(on) = 3

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