FS-N10 Datasheet | Specifications & PDF Download

Isc N-Channel MOSFET Transistor IRFS59N10D ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·

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MOSFET - Power, Single N-Channel, PQFN8 100 V, 10.8 mW, 83 A Product Preview NTMFS010N10G Features • Wide SOA for Linear Mode Operation • Low RDS(o

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PD - 93890 SMPS MOSFET IRFB59N10D IRFS59N10D IRFSL59N10D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 100V RDS(on) ma

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PD - 95378 SMPS MOSFET Applications l High frequency DC-DC converters l UPS / Motor Control Inverters l Lead-Free IRFB59N10DPbF IRFS59N10DPbF IRFSL5

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Digital Fiber Sensor FS-N10 Series Instruction Manual 96M11513 FS-N10 Series Quick Start „ Quick Start Fine sensitivity adjustment Up Down Mode

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MOSFET TO220F Package MFT-T22F series FEATURE  Operating and Storage Temperature: -55°C ~ +150°C  Fast Switching Characteristics  Improved dv/dt

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MOSFET TO220F Package MFT-T22F series FEATURE  Operating and Storage Temperature: -55°C ~ +150°C  Fast Switching Characteristics  Improved dv/dt

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MOSFET TO220F Package MFT-T22F series FEATURE  Operating and Storage Temperature: -55°C ~ +150°C  Fast Switching Characteristics  Improved dv/dt

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFSL59N10D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.025Ω ·Enhancement mode ·

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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 5.1 mW, 108 A NVMFS005N10MCL Features • Small Footprint (5x6 mm) for Compact Desig

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PD - 95378 SMPS MOSFET Applications l High frequency DC-DC converters l UPS / Motor Control Inverters l Lead-Free IRFB59N10DPbF IRFS59N10DPbF IRFSL5

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MOSFET – Power, Single N-Channel 100 V, 26 mW, 28 A NVMFS027N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize C

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PD - 93890 SMPS MOSFET IRFB59N10D IRFS59N10D IRFSL59N10D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 100V RDS(on) ma

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MOSFET – Power, Single N-Channel 100 V, 14.4 mW, 45 A NTTFS012N10MD Features • Shielded Gate MOSFET Technology • Low RDS(on) to Minimize Conduction L

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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 38 mW, 21 A NVMFS040N10MCL V(BR)DSS 100 V RDS(ON) MAX 38 mW @ 10 V 53 mW @ 4.5 V

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MOSFET - Power, Single N-Channel 100 V, 26 mW, 28 A NVTFS027N10MCL Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Min

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MOSFET – Power, Single N-Channel 100 V, 23 mW, 31 A NVMFS021N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize

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MOSFET - Power, Single N-Channel, m8FL 100 V, 72 mW, 16 A NTTFS080N10G Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Condu

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FS59N10D-VB FS59N10D-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

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MOSFET – Power, Single N-Channel 100 V, 5.1 mW, 105 A NTMFS005N10MCL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimiz

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