G170P06S P-Channel Enhancement Mode Power MOSFET .
GOFORD
G170P06 - P-Channel Enhancement Mode Power MOSFET
G170P06S P-Channel Enhancement Mode Power MOSFET Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate ch.
GOFORD
G170P06S - P-Channel Enhancement Mode Power MOSFET
G170P06S P-Channel Enhancement Mode Power MOSFET Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate ch.
GOFORD
G170P06M - P-Channel Enhancement Mode Power MOSFET
G170P06M P-Channel Enhancement Mode Power MOSFET Description The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate ch.
