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G170P06M P-Channel Enhancement Mode Power MOSFET

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Description

G170P06M P-Channel Enhancement Mode Power MOSFET .
The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Specifications

Part number: G170P06M
Manufacturer: GOFORD
File Size: 0.97 MB
Datasheet: G170P06M-GOFORD.pdf
Description: P-Channel Enhancement Mode Power MOSFET

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G170P06M P-Channel Enhancement Mode Power MOSFET GOFORD

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