• Part: G170P06M
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: GOFORD
  • Size: 0.97 MB
Download G170P06M Datasheet PDF
GOFORD
G170P06M
Description The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l Ro HS pliant -60V -65A < 17mΩ Schematic diagram Application l Power switch l DC/DC converters TO-263 Ordering Information Device G170P06M Package TO-263 Marking G170P06 Packaging 800pcs/Reel Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range (note1) (note2) VDS ID IDM VGS PD EAS TJ, Tstg -60 -65 -260 ±20 196 m J -55 To 150 ºC Thermal Resistance Parameter Thermal Resistance, Junction-to-Ambient Maximum Junction-to-Case Symbol Rth JA Rth JC Value 62 0.96 Unit ºC/W ºC/W .gofordsem...