G170P03 - P-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the G170P03, a member of the G170P03D3 P-Channel Enhancement Mode Power MOSFET family.

Datasheet Summary

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.5V) l 100% Avalanche Tested l RoHS Compliant -30V -20A < 15mΩ < 21mΩ.

📥 Download Datasheet

G170P03 P-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G170P03

Datasheet Details

Part number	G170P03
Manufacturer	GOFORD
File Size	668.61 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G170P03 Datasheet
Additional preview pages of the G170P03 datasheet.

📁 Similar Datasheet

G170EG01-V0 - LCD Module (AUO)
G170EG01-V1 - SXGA Color TFT-LCD (AUO)
G170EG01-V104 - TFT LCD (AUO)
G170ETN01.0 - SXGA Color TFT-LCD (AUO)
G170ETN02.0 - SXGA Color TFT-LCD Module (AUO)
G170ETN02.1 - SXGA Color TFT-LCD Module (AUO)
G170ETN03.1 - Color TFT-LCD (AUO)
G170J1-LE1 - TFT LCD Module (INNOLUX)
G170N06A - N-channel Enhancement Mode Power MOSFET (JIEJIE)
G1735 - GaAsP photodiode (Hamamatsu Corporation)

Other Datasheets by GOFORD

G170P03D3 - P-Channel Enhancement Mode Power MOSFET
G170P06 - P-Channel Enhancement Mode Power MOSFET
G170P06M - P-Channel Enhancement Mode Power MOSFET
G170P06S - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

G170P03D3 P-Channel Enhancement Mode Power MOSFET Description The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l RDS(ON) (at VGS = -4.

Published: Nov 14, 2024 |