G170P03 Overview
The G170P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G170P03 Key Features
- 30V -20A < 15mΩ < 21mΩ
Datasheet Details
| Part number | G170P03 |
|---|---|
| Datasheet | G170P03 G170P03D3 Datasheet (PDF) |
| File Size | 668.61 KB |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
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