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G170P06 - P-Channel Enhancement Mode Power MOSFET

Download the G170P06 datasheet PDF. This datasheet also covers the G170P06S variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -12A < 17mΩ Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G170P06S-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G170P06
Manufacturer GOFORD
File Size 0.99 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G170P06 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G170P06M P-Channel Enhancement Mode Power MOSFET
G170P06S P-Channel Enhancement Mode Power MOSFET
G170P03 P-Channel Enhancement Mode Power MOSFET
G170P03D3 P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G170P06S P-Channel Enhancement Mode Power MOSFET Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.