G170P06M - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

provide excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Features

l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -65A < 17mΩ Schematic diagram.

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G170P06M P-Channel Enhancement Mode Power MOSFET by GOFORD - Datasheet Preview — Datasheet preview – G170P06M

Datasheet Details

Part number	G170P06M
Manufacturer	GOFORD
File Size	0.97 MB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	G170P06M Datasheet
Additional preview pages of the G170P06M datasheet.

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Full PDF Text Transcription

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G170P06M P-Channel Enhancement Mode Power MOSFET Description The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.

Published: Nov 14, 2024 |