G170P06M Overview
The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G170P06M Key Features
- 60V -65A < 17mΩ
Datasheet Details
| Part number | G170P06M |
|---|---|
| Datasheet | G170P06M-GOFORD.pdf |
| File Size | 0.97 MB |
| Manufacturer | GOFORD |
| Description | P-Channel Enhancement Mode Power MOSFET |
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