G170P06M Description
The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G170P06M Key Features
- 60V -65A < 17mΩ
G170P06M is P-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
| Part Number | Description |
|---|---|
| G170P06 | P-Channel Enhancement Mode Power MOSFET |
| G170P06S | P-Channel Enhancement Mode Power MOSFET |
| G170P03 | P-Channel Enhancement Mode Power MOSFET |
| G170P03D3 | P-Channel Enhancement Mode Power MOSFET |
The G170P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.