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G170P06S - P-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = -10V) l RDS(ON) (at VGS = -10V) l 100% Avalanche Tested l RoHS Compliant -60V -12A < 17mΩ Schematic diagram.

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Datasheet Details

Part number G170P06S
Manufacturer GOFORD
File Size 0.99 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G170P06S Datasheet

Full PDF Text Transcription (Reference)

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G170P06S P-Channel Enhancement Mode Power MOSFET Description The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.