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G170P06S P-Channel Enhancement Mode Power MOSFET

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Description

G170P06S P-Channel Enhancement Mode Power MOSFET .
The G170P06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Specifications

Part number: G170P06S
Manufacturer: GOFORD
File Size: 0.99 MB
Datasheet: G170P06S-GOFORD.pdf
Description: P-Channel Enhancement Mode Power MOSFET

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G170P06S P-Channel Enhancement Mode Power MOSFET GOFORD

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