GOFORD Description G7N65 650V N-CHANNEL ENHANCEM.
DGME
DG7N65 - N-CHANNEL ENHANCEMENT MODE MOSFET
DG7N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG7N65N，， ，，，。 ，，。 DG7N65 is an N-channel enhancement mode MOSFET, which is .
Diodes
DMG7N65SJ3 - N-CHANNEL MOSFET
NEW PRODUCT ADVANCED INFORMATION DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) Max 1.4Ω @ VGS = 10V ID TC = +25.
Diodes
DMG7N65SCTI - N-CHANNEL MOSFET
OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) 1.4Ω @V.
INCHANGE
DMG7N65SJ3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance.
INCHANGE
DMG7N65SCTI - N-Channel MOSFET
isc N-Channel MOSFET Transistor DMG7N65SCTI FEATURES ·Drain Current –ID= 7.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source .
INCHANGE
DMG7N65SCT - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 7.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance.
Diodes
DMG7N65SCT - N-CHANNEL MOSFET
OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) 650V 1.4Ω @.
UTC
UTG7N65-S - 650V TRENCH GATE FIELD-STOP IGBT
UNISONIC TECHNOLOGIES CO., LTD UTG7N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT DESCRIPTION The UTC UTG.
GOFORD
G7N65 - 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GOFORD Description G7N65 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application @ 10V (Typ) 650V 1.29Ω 7A • Fast switching • 100% a.
