G7N65 Datasheet | Specifications & PDF Download

OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG7N65SCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) 1.4Ω @V

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DG7N65 N N-CHANNEL ENHANCEMENT MODE MOSFET ：V1.0 General Description DG7N65N，， ，，，。 ，，。 DG7N65 is an N-channel enhancement mode MOSFET, which is

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NEW PRODUCT ADVANCED INFORMATION DMG7N65SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) Max 1.4Ω @ VGS = 10V ID TC = +25

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMG7N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) 650V 1.4Ω @

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 5.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance

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isc N-Channel MOSFET Transistor DMG7N65SCTI FEATURES ·Drain Current –ID= 7.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 7.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance

Rating: 1 ★ (1 votes)

UNISONIC TECHNOLOGIES CO., LTD UTG7N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG

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GOFORD Description G7N65 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application @ 10V (Typ) 650V 1.29Ω 7A • Fast switching • 100% a

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