UTG7N65-S Datasheet, Igbt, UTC

✔ UTG7N65-S Features

High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.=1.5V @ IC=7.0A, VGE=15V (TC =25°C)
SYMBOL
ORDERING INFORMATION Ordering N

✔ UTG7N65-S Application

FEATURES
High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.=1.5V

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Part number:

UTG7N65-S

Manufacturer:

UTC

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198.99kb

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📄 Datasheet

Description:

650v trench gate field-stop igbt. The UTC UTG7N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers w

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UTG7N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC