UTG25N120 Datasheet, Igbt, UTC

UTG25N120 Features

• Igbt
• High switching speed
• High avalanche ruggedness
• Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C
• Low switching loss: Eoff, typ=0.

PDF File Details

Part number:

UTG25N120

Manufacturer:

UTC

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147.71kb

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📄 Datasheet

Description:

1200v npt igbt. The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with h

UTG25N120 Application

• Applications
• FEATURES
• High switching speed
• High avalanche ruggedness
• Low saturation voltage: VCE(sat), typ

TAGS

UTG25N120

UTC

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