UTG25N120 Datasheet - UTC

UTG25N120 1200V NPT IGBT

The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation voltage and low switching loss, etc. The UTC UTG25N120 is suitable for the resonant or soft switching ap.

UTG25N120 Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C

* Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG25N120L-T

UTG25N120-UTC.pdf