UTG25N120 1200V NPT IGBT

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT * .
The UTC UTG25N120 is an NPT ignition Insulated Gate Bipolar Transistor.

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Datasheet Specifications

Part number: UTG25N120
Manufacturer: UTC
File Size: 147.71 KB
Datasheet: UTG25N120-UTC.pdf
Description: 1200V NPT IGBT

Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(sat), typ =2.0V @ IC=25A and TC =25°C
* Low switching loss: Eoff, typ=0.96mJ @ IC=25A and TC=25°C
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG25N120L-T

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UTG25N120 1200V NPT IGBT UTC

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