UTG28N65-S 650V TRENCH GATE FIELD-STOP IGBT

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD UTG28N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT 1 * .
The UTC UTG28N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

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Datasheet Specifications

Part number: UTG28N65-S
Manufacturer: UTC
File Size: 204.73 KB
Datasheet: UTG28N65-S-UTC.pdf
Description: 650V TRENCH GATE FIELD-STOP IGBT

Features

* High switching speed
* High avalanche ruggedness 1
* Low saturation voltage: VCE(SAT). Typ. =1.65V @ IC=28A, VGE=15V (TC =25°C) TO-220
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG28N65L-TA3-T UTG28N65G-TA3-T TO-220 UTG28N65L-TF

Applications

* TO-247 TO-220F1

UTG28N65-S Distributors

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UTG28N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC

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