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UTG25N120-G2

1200V TRENCH GATE FIELD-STOP IGBT

UTG25N120-G2 Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C)

* Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C)

* SYMBOL 1 TO-247 1 TO-263

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Pac

UTG25N120-G2 General Description

The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N120-G2 is suitable for the resonant or soft switching applications.
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UTG25N120-G2 Datasheet (746.71 KB)

Preview of UTG25N120-G2 PDF

Datasheet Details

Part number:

UTG25N120-G2

Manufacturer:

UTC

File Size:

746.71 KB

Description:

1200v trench gate field-stop igbt.

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UTG25N120-G2 1200V TRENCH GATE FIELD-STOP IGBT UTC

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