UTG25N120-G2 Datasheet (UTC) - 1200V TRENCH GATE FIELD-STOP IGBT

UTG25N120-G2, 1200V TRENCH GATE FIELD-STOP IGBT

The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.

The UTC UTG25N120-G2 is suitable for the resonant or soft switching applications.

UTG25N120-G2 Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C)

* Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C)

* SYMBOL 1 TO-247 1 TO-263

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Pac