• Part: UTG25N120-G2
  • Description: 1200V TRENCH GATE FIELD-STOP IGBT
  • Manufacturer: Unisonic Technologies
  • Size: 746.71 KB
Download UTG25N120-G2 Datasheet PDF
Unisonic Technologies
UTG25N120-G2
UTG25N120-G2 is 1200V TRENCH GATE FIELD-STOP IGBT manufactured by Unisonic Technologies.
DESCRIPTION The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N120-G2 is suitable for the resonant or soft switching applications. - FEATURES - High switching speed - High avalanche ruggedness - Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C) - Low switching loss: EOFF, typ=2.36m J @ IC=25A (TC =25°C) - SYMBOL 1 TO-247 TO-263 - ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG25N120L-T47-T UTG25N120G-T47-T TO-247 UTG25N120L-TQ2-T UTG25N120G-TQ2-T TO-263 UTG25N120L-TQ2-R UTG25N120G-TQ2-R TO-263 Note: Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment Packing Tube Tube Tape Reel -...