UTG25N120-G2 Datasheet, Igbt, UTC

UTG25N120-G2 Features

• Igbt
• High switching speed
• High avalanche ruggedness
• Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C)
• Low switching loss: EOFF, typ=2.36

PDF File Details

Part number:

UTG25N120-G2

Manufacturer:

UTC

File Size:

746.71kb

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📄 Datasheet

Description:

1200v trench gate field-stop igbt. The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customer

UTG25N120-G2 Application

• Applications
• FEATURES
• High switching speed
• High avalanche ruggedness
• Low saturation voltage: VCE(sat), typ

TAGS

UTG25N120-G2

UTC

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