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UTG25N120-G2 1200V TRENCH GATE FIELD-STOP IGBT

UTG25N120-G2 Description

UNISONIC TECHNOLOGIES CO., LTD UTG25N120-G2 Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG25N120-G2 is an Trench Field-Stop Insulated Gate Bipolar Transistor.

UTG25N120-G2 Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(sat), typ =1.8V @ IC=25A (TC =25°C)
* Low switching loss: EOFF, typ=2.36mJ @ IC=25A (TC =25°C)
* SYMBOL 1 TO-247 1 TO-263
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Pac

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Datasheet Details

Part number
UTG25N120-G2
Manufacturer
UTC
File Size
746.71 KB
Datasheet
UTG25N120-G2-UTC.pdf
Description
1200V TRENCH GATE FIELD-STOP IGBT

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📌 All Tags

1200V TRENCH GATE FIELD-STOP IGBT UTC
UTC UTG25N120-G2-like datasheet