UTG25N65-S Datasheet, Igbt, UTC

UTG25N65-S Features

  • Igbt
  • High switching speed
  • High avalanche ruggedness
  • Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=25A, VGE=15V (TC =25°C)
  • SYMBOL
  • ORDERIN

PDF File Details

Part number:

UTG25N65-S

Manufacturer:

UTC

File Size:

211.84kb

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📄 Datasheet

Description:

650v trench gate field-stop igbt. The UTC UTG25N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers

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UTG25N65-S Application

  • Applications
  • FEATURES
  • High switching speed
  • High avalanche ruggedness
  • Low saturation voltage: VCE(SAT).Typ.=

TAGS

UTG25N65-S
650V
TRENCH
GATE
FIELD-STOP
IGBT
UTC

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