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UTG25N65-S

650V TRENCH GATE FIELD-STOP IGBT

UTG25N65-S Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=25A, VGE=15V (TC =25°C)

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG25N65L-TA3-T UTG25N65G-TA3-T TO-220 UTG25N65L-TF1-T UTG25N65G-

UTG25N65-S General Description

The UTC UTG25N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG25N65-S is suitable for the resonant or soft switching applications.
* FE.

UTG25N65-S Datasheet (211.84 KB)

Preview of UTG25N65-S PDF

Datasheet Details

Part number:

UTG25N65-S

Manufacturer:

UTC

File Size:

211.84 KB

Description:

650v trench gate field-stop igbt.

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UTG25N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC

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