UTG25N65-S 650V TRENCH GATE FIELD-STOP IGBT

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD UTG25N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG25N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

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Datasheet Specifications

Part number: UTG25N65-S
Manufacturer: UTC
File Size: 211.84 KB
Datasheet: UTG25N65-S-UTC.pdf
Description: 650V TRENCH GATE FIELD-STOP IGBT

Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT). Typ. =1.65V @ IC=25A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG25N65L-TA3-T UTG25N65G-TA3-T TO-220 UTG25N65L-TF1-T UTG25N65G-

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UTG25N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC

UTC UTG25N65-S-like datasheet