UTG10N65-S Datasheet, Igbt, UTC

UTG10N65-S Features

• Igbt
• High switching speed
• High avalanche ruggedness
• Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10A, VGE=15V (TC =25°C)
• SYMBOL
• ORDERIN

PDF File Details

Part number:

UTG10N65-S

Manufacturer:

UTC

File Size:

211.71kb

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📄 Datasheet

Description:

650v trench gate field-stop igbt. The UTC UTG10N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers

UTG10N65-S Application

• Applications
• FEATURES
• High switching speed
• High avalanche ruggedness
• Low saturation voltage: VCE(SAT).Typ.=

TAGS

UTG10N65-S

UTC

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