UTG10N65-S Datasheet - UTC

UTG10N65-S 650V TRENCH GATE FIELD-STOP IGBT

The UTC UTG10N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG10N65-S is suitable for the resonant or soft switching applications. * FE.

UTG10N65-S Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10A, VGE=15V (TC =25°C)

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG10N65L-TA3-T UTG10N65G-TA3-T TO-220 UTG10N65L-TF1-T UTG10N65G-

UTG10N65-S-UTC.pdf