UTG10N65-S 650V TRENCH GATE FIELD-STOP IGBT

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG10N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

📥 Download Datasheet

UTG10N65-S Datasheet Preview — Preview of UTG10N65-S PDF

Datasheet Specifications

Part number: UTG10N65-S
Manufacturer: UTC
File Size: 211.71 KB
Datasheet: UTG10N65-S-UTC.pdf
Description: 650V TRENCH GATE FIELD-STOP IGBT

Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT). Typ. =1.65V @ IC=10A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG10N65L-TA3-T UTG10N65G-TA3-T TO-220 UTG10N65L-TF1-T UTG10N65G-

UTG10N65-S Distributors

📁 Related Datasheet

UTG24P05 UTG48T01

📌 All Tags

UTG10N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC

UTC UTG10N65-S-like datasheet