UTG10N65-S - 650V TRENCH GATE FIELD-STOP IGBT
The UTC UTG10N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.
it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.
The UTC UTG10N65-S is suitable for the resonant or soft switching applications.
* FE
UTG10N65-S Features
* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=10A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG10N65L-TA3-T UTG10N65G-TA3-T TO-220 UTG10N65L-TF1-T UTG10N65G-
