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UTG10N65-S 650V TRENCH GATE FIELD-STOP IGBT

UTG10N65-S Description

UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG10N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

UTG10N65-S Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT). Typ. =1.65V @ IC=10A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UTG10N65L-TA3-T UTG10N65G-TA3-T TO-220 UTG10N65L-TF1-T UTG10N65G-

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Datasheet Details

Part number
UTG10N65-S
Manufacturer
UTC
File Size
211.71 KB
Datasheet
UTG10N65-S-UTC.pdf
Description
650V TRENCH GATE FIELD-STOP IGBT

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📌 All Tags

650V TRENCH GATE FIELD-STOP IGBT UTC
UTC UTG10N65-S-like datasheet