Datasheet4U.com

UTG10N65-S - 650V TRENCH GATE FIELD-STOP IGBT

UTC

📥 Download Datasheet

UTG10N65-S Datasheet Preview — Preview of UTG10N65-S PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	UTG10N65-S
Manufacturer	UTC
File Size	211.71 KB
Description	650V TRENCH GATE FIELD-STOP IGBT
Datasheet	UTG10N65-S-UTC.pdf

UTG10N65-S Product details

Description

The UTC UTG10N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

Features

High switching speed.
High avalanche ruggedness.
Low saturation voltage: VCE(SAT). Typ. =1.65V @ IC=10A, VGE=15V (TC =25°C).
SYMBOL.

📁 UTG10N65-S Similar Datasheet

UTG24P05 - 100/1000 BASE-T SINGLE PORT MAGNETICS MODULE (UTG)
UTG48T01 - 100/1000 BASE-T DUAL PORT MAGNETICS MODULE (UTG)

Other Datasheets by UTC

UTG20N65-S - 650V TRENCH GATE FIELD-STOP IGBT
UTG25N120 - 1200V NPT IGBT
UTG25N120-G2 - 1200V TRENCH GATE FIELD-STOP IGBT
UTG25N65-S - 650V TRENCH GATE FIELD-STOP IGBT
UTG28N65-S - 650V TRENCH GATE FIELD-STOP IGBT
UTG30N65-S - 650V TRENCH GATE FIELD-STOP IGBT

Published: Mar 30, 2024 |