UTG75N65-S

650V TRENCH GATE FIELD-STOP IGBT

UTC

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Datasheet Details

Part number:

UTG75N65-S

Manufacturer:

UTC

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198.62 KB

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Description:

650v trench gate field-stop igbt.
UNISONIC TECHNOLOGIES CO., LTD UTG75N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRE.
The UTC UTG75N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced.

✔ UTG75N65-S Features

High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=75A, VGE=15V (TC =25°C)
SYMBOL
ORDERING INFORMATION Ordering N

✔ UTG75N65-S Application

FEATURES
High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.=1.65V

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UTG75N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC