UTG75N65ND-S Datasheet, Igbt, UTC

✔ UTG75N65ND-S Features

High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.=1.65V @ IC=75A, VGE=15V (TC =25°C)
SYMBOL
ORDERING INFORMATION Ordering N

✔ UTG75N65ND-S Application

FEATURES
High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.=1.65V

PDF File Details

UTC manufacturer logo

Part number:

UTG75N65ND-S

Manufacturer:

UTC

File Size:

174.39 KB

Download:

📄 Datasheet

Description:

650v trench gate field-stop igbt. The UTC UTG75N65ND-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customer

📥 Download PDF (174.39 KB)

📁 Related Datasheet

UTG75N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)

UTG70N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)

UTG7N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)

UTG10N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)

UTG20N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)

UTG24P05 - 100/1000 BASE-T SINGLE PORT MAGNETICS MODULE (UTG)

UTG25N120 - 1200V NPT IGBT (UTC)

UTG25N120-G2 - 1200V TRENCH GATE FIELD-STOP IGBT (UTC)

TAGS

UTG75N65ND-S 650V TRENCH GATE FIELD-STOP IGBT UTC