UTG70N65-S

650V TRENCH GATE FIELD-STOP IGBT

UTC

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Datasheet Details

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UTG70N65-S

Manufacturer:

UTC

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Description:

650v trench gate field-stop igbt.
UNISONIC TECHNOLOGIES CO., LTD UTG70N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIEL.
The UTC UTG70N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced.

✔ UTG70N65-S Features

High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.=1.75V @ IC=70A, VGE=15V (TC =25°C)
SYMBOL
ORDERING INFORMATION Ordering N

✔ UTG70N65-S Application

FEATURES
High switching speed
High avalanche ruggedness
Low saturation voltage: VCE(SAT).Typ.=1.75V

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UTG70N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC