INSULATED GATE BIPOLAR TRANSISTOR Features • Low.
International Rectifier
G7PH42U-EP - IRG7PH42U-EP
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square.
International Rectifier
IRG7PH42U-EP - INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square.
International Rectifier
IRG7PH42UD-EP - INSULATED GATE BIPOLAR TRANSISTOR
PD - 97391B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low swi.
International Rectifier
IRG7PH42UD1-EP - INSULATED GATE BIPOLAR TRANSISTOR
PD - 97480 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD1PbF IRG7PH42UD.
International Rectifier
IRG7PH42U-EP - INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (ON) trench IGBT technology • Low switching losses • Maximum junction temperature 175 °C • Square.
