IRG7PH42U-EP Datasheet - International Rectifier

IRG7PH42U-EP, INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR .

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IRG7PH42U-EP_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRG7PH42U-EP

Manufacturer:

International Rectifier

File Size:

293.06 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) trench IGBT technology
* Low switching losses
* Maximum junction temperature 175 °C
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) temperature co-efficient
* Tight parameter distribution
* Lead -Fre

Applications

* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation Applications
* U. P. S
* Welding
* Solar inverter

IRG7PH42U-EP Distributors

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IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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