Automotive Relay General Purpose Automotive Power .
UNIKC
PB5G8JW - MOSFET
PB5G8JW Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = 4.5V ID 5A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (.
Samsung
KLMDG8JENB-B041 - eMMC
SAMSUNG CONFIDENTIAL Rev. 1.0, Jul. 2015 KLMxGxJENB-B041 Samsung eMMC Product family eMMC 5.1 Specification compatibility datasheet SAMSUNG ELECTRONIC.
Winbond
W9751G8JB - 16M X 4 BANKS X 8 BIT DDR2 SDRAM
www.DataSheet.co.kr W9751G8JB 16M 4 BANKS 8 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION .
Omron Electronics
G8J - Automotive Relay
Automotive Relay General Purpose Automotive Power Relay Standard ISO terminal footprint s Handles heavy automotive load; inrush current 100A s High cu.
Panasonic Semiconductor
LNJ308G8JRA - Surface Mounting Chip LED
LED Surface Mounting Chip LED 1.6±0.1 SS Type Type No. Lighting Color LNJ308G8JRA ············ Green 0.8±0.1 Unit : mm 1.1±0.1 Absolute Maximum R.
Vishay Siliconix
UG8JCT - Dual Ultrafast Plastic Rectifier Series
www.DataSheet4U.com UG8JCT, UGF8JCT, UGB8JCT Series New Product Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifi.
UTC
UG8J - DUAL DIGITAL TRANSISTORS
UNISONIC TECHNOLOGIES CO., LTD UG8J NPN SILICON TRANSISTOR EMITTER COMMON (DUAL DIGITAL TRANSISTORS) FEATURES * Two DTC143Z chips in a SOT-353 p.
Winbond
W9712G8JB - 4M X 4 BANKS X 8 BIT DDR2 SDRAM
www.DataSheet.co.kr W9712G8JB 4M × 4 BANKS × 8 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION .
Winbond
W972GG8JB - 32M X 8 BANKS X 8 BIT DDR2 SDRAM
W972GG8JB 32M 8 BANKS 8 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION .
Omron Electronics
G8JR - Automotive High Current Relay
Automotive High Current Relay Automotive High Current Relay Special purpose high power automotive relay. (70 Amp) Wide temperature range: –40°C to +13.
Omron Electronics
G8JN - General Purpose Automotive Power Relay
Automotive Relay G8JN General Purpose Automotive Power Relay • Wide temperature range: -40° C to 125° C. • Standard ISO terminal footprint. • Handles.
Taiwan Semiconductor
UG8J - Ultra Fast Rectifiers
CREAT BY ART Features High efficiency, low VF High current capability High reliability High surge current capability Low power loss For u.
NIKO-SEM
PB5G8JW - Dual N-Channel Enhancement Mode Field Effect Transistor
NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor PB5G8JW PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID.
General Semiconductor
UG8JT - (UG8xT) ULTRAFAST SOFT RECOVERY RECTIFIER
www.DataSheet4U.com ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION UG8HT AND UG8JT ULTRAFAST SOFT RECOVERY RECTIFIER Reverse Volta.
Winbond
W971GG8JB - 16M X 8 BANKS X 8 BIT DDR2 SDRAM
W971GG8JB 16M 8 BANKS 8 BIT DDR2 SDRAM Table of Contents- 1. GENERAL DESCRIPTION .
Winbond
W9725G8JB - 8M X 4 BANKS X 8 BIT DDR2 SDRAM
www.DataSheet.co.kr W9725G8JB 8M 4 BANKS 8 BIT DDR2 SDRAM Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION .
