GD6 Datasheet | Specifications & PDF Download

VCE = 600 V, IC = 37 A Trench IGBT with Fast Recovery Diode MGD623S Data Sheet Description The MGD623S is 600 V trench IGBT. Sanken original trench

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VCE = 600 V, IC = 37 A Trench IGBT with Fast Recovery Diode MGD623N Data Sheet Description The MGD623N is 600 V trench IGBT. Sanken original trench

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600 V, 20 A, IGBT with Fast Recovery Diode MGD622 Features  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Dio

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650 V / 130 mΩ GaN HEMT with ICeGaN™ Gate and Current Sense DECEMBER 2022 www.camgandevices.com Issued 2022-12-23 01 Sy CGD65A130S2 DATASHEET Data

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GD65232, GD75232 SLLS206L – MAY 2005 – REVISED AUGUST 2024 GD65232, GD75232 Multiple RS-232 Drivers and Receivers 1 Features • Single chip with easy

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GD600HTA120P6H STARPOWER SEMICONDUCTOR GD600HTA120P6H 1200V/600A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module p

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BSM 50 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate

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BSM50GD60DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plat

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CL-GD62XX www.DataSheet4U.com ® Preliminary Data Book FEATURES s IBM®_VGA hardware-compatible s Integrated RAMDAC™ s Integrated programmable freque

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CL-GD62XX www.DataSheet4U.com ® Preliminary Data Book FEATURES s IBM®_VGA hardware-compatible s Integrated RAMDAC™ s Integrated programmable freque

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GD60MPS17H 1700V 60A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Aval

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DISCRETE SEMICONDUCTORS DATA SHEET BGD601 CATV amplifier module Product specification Supersedes data of February 1995 File under Discrete Semiconduc

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Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our

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Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our

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GD60MPS06H 650V 60A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit

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GD600HFY120C2S STARPOWER SEMICONDUCTOR GD600HFY120C2S 1200V/600A 2 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module p

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