CGD65A130S2 GaN HEMT

Description

650 V / 130 mΩ GaN HEMT with ICeGaN™ Gate and Current Sense DECEMBER 2022 www.camgandevices.com Issued 2022-12-23 01 !Sy CGD65A130S2 DATASHEET Data.
The CGD65A130S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high.

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Datasheet Specifications

Part number: CGD65A130S2
Manufacturer: Cambridge GaN Devices
File Size: 915.70 KB
Datasheet: CGD65A130S2-CambridgeGaNDevices.pdf
Description: GaN HEMT

Features

* 650 V - 12 A e-mode GaN power switch
* ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers for Si MOSFETs
* Gate drive voltage 9 V to 20 V
* Current sense function
* RDS(on) = 130 mΩ
* Suitable f

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CGD65A130S2 GaN HEMT Cambridge GaN Devices

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