CGD65A130S2 Datasheet, Hemt, Cambridge GaN Devices

CGD65A130S2 Features

• Hemt
• 650 V - 12 A e-mode GaN power switch
• ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers for Si MOSFETs
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Part number:

CGD65A130S2

Manufacturer:

Cambridge GaN Devices

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📄 Datasheet

Description:

Gan hemt. The CGD65A130S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver h

CGD65A130S2 Application

• Applications The CGD65A130S2 features CGD’s ICeGaN™ gate technology enabling compatibility with virtually all gate drivers and controller chips ava

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CGD65A130S2

Cambridge GaN Devices

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