* 650 V - 12 A e-mode GaN power switch
* ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers for Si MOSFETs
* Gate drive voltage 9 V to 20 V
* Current sense function
* RDS(on) = 130 mΩ
* Suitable f
CGD65A130S2 Datasheet (915.70 KB)
CGD65A130S2
Cambridge GaN Devices
915.70 KB
Gan hemt.
650 V / 130 mΩ GaN HEMT with ICeGaN™ Gate and Current Sense
DECEMBER 2022
www.camgandevices.com Issued 2022-12-23
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CGD65A130S2 DATASHEET
Data.
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