CGD65A130S2 Datasheet - Cambridge GaN Devices

CGD65A130S2 GaN HEMT

CGD65A130S2 Features

* 650 V - 12 A e-mode GaN power switch

* ICeGaN™ gate technology for high gate threshold and broad gate voltage window compatible with gate-drivers for Si MOSFETs

* Gate drive voltage 9 V to 20 V

* Current sense function

* RDS(on) = 130 mΩ

* Suitable f

Datasheet Details

CGD65A130S2

Cambridge GaN Devices

915.70 KB

Gan hemt.

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CGD65A130S2 GaN HEMT Cambridge GaN Devices

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